Semiconductor device and manufacturing method thereof

ABSTRACT

Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

The present patent application is a continuation of U.S. patentapplication Ser. No. 13/758,359, filed Feb. 4, 2013, which makesreference to, claims priority to, and claims the benefit of KoreanPatent Application No. 10-2012-0129646, filed on Nov. 15, 2012, thecomplete subject matter of each of which is hereby incorporated hereinby reference, in their respective entireties.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device and a method ofmanufacturing the same.

BACKGROUND OF THE INVENTION

Generally, semiconductor devices include semiconductor die which aremanufactured by processing a wafer to form an integrated circuit on thewafer. Such a semiconductor device has a structure in which asemiconductor die is mounted on a substrate such as a lead frame or aprinted circuit board (PCB). Also, a wafer level semiconductor devicewhich is packaged using a wafer itself as a substrate without a separatesubstrate is also being used.

When semiconductor devices are manufactured, in a situation where awafer including a plurality of semiconductor die is moved using variousequipment, a carrier that adheres to the wafer to fix the wafer and toprevent the wafer from being damaged may be used. Afterwards, thecarrier is removed from the wafer after the wafer is divided into theplurality of individual semiconductor die.

In some cases, it may be very difficult to remove the carrier from awafer having a thin thickness without damaging the wafer. Also, theremay be a limitation that the carrier is removed one by one from each ofthe plurality of semiconductor die, after the wafer is divided into theindividual semiconductor die.

Further limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such systems with some aspects of the present invention asset forth in the remainder of the present application with reference tothe drawings.

BRIEF SUMMARY OF THE INVENTION

A semiconductor device and method of manufacturing a semiconductordevice, substantially as shown in and/or described in connection with atleast one of the figures, as set forth more completely in the claims.

These and other advantages, aspects and novel features of the presentinvention, as well as details of an illustrated embodiment thereof, willbe more fully understood from the following description and drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 2 illustrates a flowchart of an exemplary method of manufacturingthe semiconductor device of FIG. 1, in accordance with a representativeembodiment of the present invention.

FIGS. 3A to 3K are cross-sectional views of the exemplary semiconductordevice of FIG. 1, to assist in explaining the exemplary method ofmanufacturing the semiconductor device of FIG. 2, in accordance with arepresentative embodiment of the present invention.

FIG. 4 illustrates a cross-sectional view of another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 5 illustrates a cross-sectional view of yet another semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 6 illustrates a cross-sectional view of still another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 7 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 8 illustrates a cross-sectional view of another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 9 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with yet another representative embodiment of thepresent invention.

FIG. 10 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 11 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 12 illustrates a flowchart of an exemplary method of manufacturingthe exemplary semiconductor device of FIG. 11, in accordance with arepresentative embodiment of the present invention.

FIGS. 13A to 13L are cross-sectional views that may correspond to theexemplary semiconductor device of FIG. 12, to assist in explaining themethod of manufacturing the semiconductor device of FIG. 12, inaccordance with a representative embodiment of the present invention.

FIG. 14 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 15 illustrates a cross-sectional view of another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 16 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

FIG. 17 illustrates a cross-sectional view of yet another exemplarysemiconductor, in accordance with a representative embodiment of thepresent invention.

FIG. 18 illustrates a cross-sectional view of yet another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 19 illustrates a cross-sectional view of still another exemplarysemiconductor device, in accordance with a representative embodiment ofthe present invention.

FIG. 20 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Aspects of the present invention relate to a semiconductor device and amethod of manufacturing the same. More specifically, representativeembodiments of the present invention may relate to a semiconductordevice and a method of manufacturing such a semiconductor device, wherethe semiconductor device includes a plurality of semiconductor die.

Preferred embodiments of the invention will be described in more detailwith reference to the accompanying drawings. In such a manner, thoseskilled in the art will easily realize the embodiments of the presentinvention upon a careful reading of the present patent application.

It should be noted that the thickness or size of each layer in theaccompanying drawings is exaggerated for clarity, and that likereference numerals refer to like elements. Additionally, the term“semiconductor die” in this specification includes, for example, asemiconductor chip having an active circuit and/or a passive circuit, asemiconductor wafer, or equivalents thereof. In the followingdescription, it will be understood that when one part is electricallyconnected to another part, the one part can be directly connected to theother part, or intervening parts may also be present.

As utilized herein, the term “exemplary” means serving as a non-limitingexample, instance, or illustration. Also, as utilized herein, the term“may” is generally synonymous with the phrase “may, for example”, inthat such term is generally utilized to present non-limiting exampleillustrations.

FIG. 1 illustrates a cross-sectional view of an exemplary semiconductordevice 100, in accordance with a representative embodiment of thepresent invention.

Referring now to FIG. 1, it can be seen that the semiconductor device100 includes a first semiconductor die 110 where a plurality of throughelectrodes 111 and conductive pads 112 are disposed, a secondsemiconductor die 120 on which one or more conductive pillars 121 aredisposed, a first encapsulant 130 surrounding the second semiconductordie 120, and one or more conductive pillars 140 disposed on the firstsemiconductor die 110.

In a representative embodiment of the present invention, the firstsemiconductor die 110 may include a silicon semiconductor, a compoundsemiconductor, or any suitable equivalent, but is not necessarilylimited to a kind of semiconductor. As illustrated in FIG. 1, the firstsemiconductor die 110 has a plate shape having an approximately flatfirst surface 110 a and an approximately flat second surface 110 bopposite to the first surface 110 a. The first semiconductor die 110includes the plurality of through electrodes 111 passing between thefirst surface 110 a and the second surface 110 b. Also, the firstsemiconductor die 110 includes the plurality of conductive pads 112disposed on the second surface 110 b. As shown in FIG. 1, the pluralityof conductive pads 112 are electrically connected to the plurality ofthrough electrodes 111, respectively. Each of the through electrodes 111electrically connects one of the one or more conductive pillars 140disposed on the first surface 110 a to a corresponding one of theconductive pads 112 disposed on the second surface 110 b of the firstsemiconductor die 110. The conductive pads 112 may be provided through aredistribution pattern process, but a representative embodiment of thepresent disclosure is not necessarily limited in that manner.

In a representative embodiment of the present invention, the secondsemiconductor die 120 may include a silicon semiconductor, a compoundsemiconductor, or any suitable equivalent, but is not necessarilylimited to a particular kind of semiconductor. As shown in FIG. 1, thesecond semiconductor die 120 has a plate shape having an approximatelyflat first surface 120 a and an approximately flat second surface 120 bopposite to the first surface 120 a. The first surface 120 a of thesecond semiconductor die 120 faces the second surface 110 b of the firstsemiconductor die 110. The second semiconductor die 120 of FIG. 1includes a plurality of conductive pillars 121 on the first surface 120a that are electrically connected to the first semiconductor die 110.The conductive pillars 121 are disposed on the first surface 120 a ofthe second semiconductor die 120 facing the first semiconductor die 110.The conductive pillars 121 may be a copper pillar, but a representativeembodiment of the present invention is not necessarily limited to thatparticular material, and may be fabricated using any suitable material.Each of the conductive pillars 121 may include a solder cap 121 a on anend thereof. As shown in FIG. 1, each of the conductive pillars 121 areelectrically connected to corresponding conductive pad 112 disposed onthe second surface 110 b of the first semiconductor die 110. Thus, thesecond semiconductor die 120 is electrically connected to the firstsemiconductor die 110. It should be noted that although the illustrationof FIG. 1 shows a particular number and arrangement of conductivepillars 121, through electrodes 111, conductive pads 112, conductivepillars 140, and solder caps 121 a, this is for reasons of illustrationand does not necessarily represent a specific limitation of the presentinvention, unless explicitly recited in the claims.

In the example of FIG. 1, the first encapsulant 130 covers the secondsurface 110 b of the first semiconductor die 110 and surrounds thesecond semiconductor die 120 to protect the first and secondsemiconductor die 110 and 120 against external environments. However,the first surface 110 a of the first semiconductor die 110 is exposed tothe external environment outside of the first encapsulant 130. That is,the first encapsulant 130 covers the second surface 110 b of the firstsemiconductor die 110 and surrounds the second semiconductor die 120.The first encapsulant 130 has a first surface 130 a contacting thesecond surface 110 b of the first semiconductor die 110 and a secondsurface 130 b opposite to the first surface 130 a. The first encapsulant130 may, for example, be formed of an epoxy-based resin that is anelectrically non-conductive material.

The one or more conductive pillars 140 are electrically connected tocorresponding ones of the through electrodes 111 exposed at the firstsurface 110 a of the first semiconductor die 110. The one or moreconductive pillars 140 may be a copper pillar, but a representativeembodiment of the present invention is not necessarily limited to thatspecific material, and may employ any suitable material. The one or moreconductive pillars 140 may each include a solder cap 140 a on an endthereof.

Therefore, a semiconductor device such as the semiconductor device 100of FIG. 1, in accordance with a representative embodiment of the presentinvention may be, for example, manufactured in a flip chip shape. Thus,the semiconductor device 100 having the flip chip shape may be mountedon a mother board or a main board as it is shown in FIG. 1.

FIG. 2 illustrates a flowchart of an exemplary method of manufacturingthe semiconductor device 100 of FIG. 1. Referring to FIG. 2, a method ofmanufacturing a semiconductor device in accordance with a representativeembodiment of the present invention may include a first semiconductordie preparation process S1, a carrier adhesion process S2, a grindingprocess S3, a conductive pad formation process S4, a secondsemiconductor die seat process S5, an encapsulation process S6, acarrier separation process S7, an conductive pillar formation processS8, and a singularization process S9.

The exemplary method of manufacturing the semiconductor device 100 willnow be described in detail with reference to FIGS. 3A to 3K.

FIG. 3A illustrates a cross-sectional view of an exemplary firstsemiconductor die preparation process S1 in the exemplary method ofmanufacturing the semiconductor device 100 illustrated in FIG. 2, inaccordance with a representative embodiment of the present invention. Inthe first semiconductor die preparation process S1, a firstsemiconductor die (110 x) having an approximately flat first surface 110a and an approximately flat second surface 110 bx opposite to the firstsurface 110 a and including a plurality of through holes exposed to thefirst surface 110 a is prepared. Here, the first surface 110 a of thefirst semiconductor die 110 x is disposed on a top surface of the firstsemiconductor die 110 x, and a second surface 110 bx is disposed on abottom surface of the first semiconductor die 110 x. The throughelectrode 111 is defined as a through hole in the first semiconductordie 110 x with a predetermined depth from the first surface 110 a of thefirst semiconductor die 110 x. The through holes are not exposed at thesecond surface 110 bx of the first semiconductor die 110 x. A throughhole may be formed in the first surface 110 a of the first semiconductordie 110 x, and then a conductive material may be filled into the throughhole to form the through electrode 111. It should be noted that themanner of fabrication discussed above and shown in FIG. 3A is notnecessarily a specific limitation of the present invention, unlessexplicitly recited in the claims, and that other suitable fabricationmethods may be used. The through electrode 111 may be formed of one ormore materials selected from copper (Cu), gold (Au), silver (Ag),aluminum (Al), and any other suitable equivalents, and theidentification of these materials here does not necessarily represent aspecific limitation of the present invention, unless explicitly recitedin the claims.

FIG. 3B illustrates a cross-sectional view of an exemplary carrieradhesion process S2 in the exemplary method of manufacturing thesemiconductor device 100 of FIG. 2, in accordance with a representativeembodiment of the present invention. In the carrier adhesion process S2illustrated in FIG. 3B, a carrier 119 temporarily adheres to cover thefirst surface 110 a of the first semiconductor die 110 x. In somerepresentative embodiments of the present invention, the carrier 119temporarily adheres to the first semiconductor die 110 x by means of anadhesive 119 a. The carrier 119 may adhere to fix the firstsemiconductor die 110 x and prevent the first semiconductor die 110 xfrom being damaged when the first semiconductor die 110 x is moved byequipment for each process in following processes.

FIGS. 3C and 3D illustrate cross-sectional views of an exemplarygrinding process S3 in the exemplary method of manufacturing thesemiconductor device 100 of FIG. 2, in accordance with a representativeembodiment of the present invention. In the grinding process S3, asshown in FIG. 3C, the carrier 119 to which a first semiconductor die 110x adheres is overturned to allow the second surface 110 bx of the firstsemiconductor die 110 x to be disposed facing an upper side. That is,the first semiconductor die 110 x is disposed at an upper position, andthe carrier 119 is disposed at a lower position. Thereafter, in thegrinding process S3, as shown in FIG. 3D, the second surface 110 bx ofthe first semiconductor die 110 x is ground to remove a portion of thefirst semiconductor die 110 x so that the through electrode 111 isexposed to a second surface 110 b of the thinned first semiconductor die110. Thus, the first semiconductor die 110 of FIG. 3D may have athickness according to the specifications of the semiconductor device100. For example, the grinding method may be performed using a diamondgrinder or any suitable equivalent, and the use of grinding may bereplaced by any other suitable method of removing the material of thefirst semiconductor die 110 x to produce the thinned first semiconductordie 110, and exposing the through electrodes 111, as known now or in thefuture.

FIG. 3E illustrates a cross-sectional view of an exemplary conductivepad formation process S4 in the exemplary method of manufacturing thesemiconductor device 100 of FIG. 2, in accordance with a representativeembodiment of the present invention. In the conductive pad formationprocess S4 of FIG. 3E, one or more conductive pads 112 are formed on thesecond surface 110 b of the first semiconductor die 110. As shown inFIG. 3E, the one or more conductive pads 112 are electrically connectedto corresponding through electrodes 111 that are exposed at the secondsurface 110 b of the first semiconductor die 110. In a representativeembodiment of the present invention, the one or more conductive pads 112may be formed of copper, aluminum, or a suitable equivalent, and theparticular materials identified here do not necessarily representspecific limitations of the present invention, unless explicitly recitedin the claims. The one or more conductive pads 112 may, for example, beformed by using sputtering, vacuum deposition, photo lithography, or anyother suitable process known now or in the future.

FIG. 3F illustrates a cross-sectional view of an exemplary secondsemiconductor die seat process S5 in the exemplary method ofmanufacturing the semiconductor device 100 of FIG. 2, in accordance witha representative embodiment of the present invention. In the secondsemiconductor die seat process S5 shown in FIG. 3F, a semiconductor die120 including one or more conductive pillars 121 is seated on the secondsurface 110 b of the first semiconductor die 110. As shown in FIG. 3F,the one or more conductive pads 112 of the first semiconductor die 110are electrically connected to corresponding conductive pillars 121 ofthe second semiconductor die 120. In a representative embodiment of thepresent invention, a solder cap 121 a formed on an end of the one ormore conductive pillars 121 is melted, the one or more conductivepillars 121 are, thus, connected to the conductive pads 112. In thismanner, the second semiconductor die 120 is seated on the firstsemiconductor die 110 and is electrically connected to the firstsemiconductor die 110.

FIG. 3G illustrates a cross-sectional view of an exemplary encapsulationprocess S6 in the exemplary method of manufacturing the semiconductordevice 100 of FIG. 2, in accordance with a representative embodiment ofthe present invention. In the encapsulation process S6 of FIG. 3G, thesecond surface 110 b of the first semiconductor die 110 may be coveredby, and the second semiconductor die 120 may be encapsulated andsurrounded by, a first encapsulant 130. The first encapsulant 130 mayelectrically protect the one or more conductive pads 112 of the firstsemiconductor die 110 and the one or more conductive pillars 121 of thesecond semiconductor die 120. In the encapsulation process S6 of FIG.3G, when the first encapsulant 130 is formed, the first encapsulant 130may, for example, be cured by thermal treatment, or using any othersuitable means.

FIG. 3H illustrates a cross-sectional view of an exemplary carrierseparation process S7 in the exemplary method of manufacturing thesemiconductor device 100 of FIG. 2, in accordance with a representativeembodiment of the present invention. In the carrier separation processS7 of FIG. 3H, the carrier 119 temporarily adhering to the first surface110 a of the first semiconductor die 110 in the carrier adhesion processS2 is separated. The carrier 119 may be separated from the firstsemiconductor die 110 after a predetermined stimulation is applied intothe adhesive 119 a to reduce strength of adhesiveness. The adhesive 119a of the carrier 119 may be reduced in adhesiveness by, for example, thethermal treatment performed for curing the first encapsulant 130 in theencapsulation process S6, but this does not necessarily represent aspecific limitation of the present invention, unless explicitly recitedin the claims. Also, in the carrier separation process S7 illustrated inFIG. 3H, the carrier 119 may be separated and removed to expose thefirst surface 110 a of the first semiconductor die 110 to the outsideenvironment.

FIGS. 3I and 3J illustrate cross-sectional views of an exemplaryconductive pillar formation process S8 in the exemplary method ofmanufacturing the semiconductor device 100 of FIG. 2, in accordance witha representative embodiment of the present invention. In the conductivepillar formation process S8, as shown in FIG. 3I, the first encapsulant130 covering the second surface 110 b of the first semiconductor die 110is overturned to allow the first surface 110 a of the firstsemiconductor die 110 to be disposed facing an upper side. That is, thefirst semiconductor die 110 is disposed on an upper side, and the secondsemiconductor die 120 and the first encapsulant 130 are disposed on alower side. In a representative embodiment of the present invention, thefirst encapsulant 130 may function as a carrier for fixing the firstsemiconductor die 110 and the second semiconductor die 120 when thefirst and second semiconductor die 110 x and 120 are moved usingequipment for each portion of the process. Also, in the conductivepillar formation process S8, as shown in FIG. 3J, one or more conductivepillars 140 may be formed on the first surface 110 a of the firstsemiconductor die 110 disposed on the upper side. The one or moreconductive pillars 140 may, for example, be a copper pillar. In arepresentative embodiment of the present invention, a correspondingsolder cap 140 a may be further formed on an end of each of the one ormore conductive pillars 140.

FIG. 3K illustrates a cross-sectional view of an exemplarysingularization process S9 in the exemplary method of manufacturing thesemiconductor device 100 of FIG. 1, in accordance with a representativeembodiment of the present invention. In the singularization process S9of FIG. 2, a wafer comprising a plurality of semiconductor devices isdiced into individual semiconductor devices 100 by using a dicing tool(not shown) such as, for example, a diamond wheel, a laser beam, or anysuitable means known now or in the future.

As described above, in the exemplary method of manufacturing thesemiconductor device 100, the second semiconductor die 120 may bestacked on the first semiconductor die 110, and the first encapsulant130 may be formed. Then, the carrier 119 may be removed. Thus, thecarrier 119 may be easily removed, as compared to when that a carrier isremoved from a wafer having a thin thickness. Also, in the method ofmanufacturing the semiconductor device 100, since the carrier 119 isremoved before the semiconductor devices are separated from each other,the carrier 119 may be easily removed when compared that a carrier 119is removed after semiconductor devices are separated from each other.

FIG. 4 illustrates a cross-sectional view of an exemplary semiconductordevice 200, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 4, the semiconductor device 200 inaccordance with a representative embodiment of the present invention mayinclude a semiconductor device 100, a circuit board 210, an under fill220, a cover 230, a thermally conductive adhesive 240 (or otherthermally conductive material), and one or more solder balls 250. Thesemiconductor device 100 has the configuration similar to that of thesemiconductor device 100 of FIG. 1, and thus, may be referred to hereinas a flip chip device. Note that utilization of the phrase “flip chipdevice” herein is merely for non-limiting illustrative purposes andshould not limit the scope of various aspects of the present inventionunless explicitly claimed.

The flip chip device 100 includes one or more conductive pillars 140exposed to one surface thereof. As shown in the example of FIG. 4, theone or more conductive pillars 140 are mounted on a second surface 210 bof the circuit board 210.

The circuit board 210 includes a circuit pattern and an insulation layer212. Furthermore, a passive device 260 may be mounted on the circuitboard 210. Also, as described above, the one or more conductive pillars140 of the flip chip device 100 are electrically connected to thecircuit pattern 211 of the circuit board 210.

The under fill 220 is formed between the flip chip device 100 and thecircuit board 210. That is, the under fill 220 is disposed on thecircuit board 210 to surround the one or more conductive pillars 140 aswell as the first surface 110 a of the first semiconductor die 110 ofthe flip chip device 100. Thus, the under fill 220 may prevent the flipchip device 100 and the circuit board 210 from being separated from eachother by any stress that may be due to a difference in the coefficientof thermal expansion between the flip chip device 100 and the circuitboard 210.

The cover 230 is attached to a second surface 210 b of the circuit board210 to surround the flip chip device 100. Thus, the flip chip device 100may be protected against external environments by the cover 230. Thecover 230 may be formed of a metal, ceramic, or any suitable equivalentto improve heat dissipation performance. The materials indicated abovedo not necessarily represent a specific limitation of the presentinvention, as other materials may be used for the cover 230 withoutdeparting from the spirit and scope of the present invention.

In a representative embodiment of the present invention, thermallyconductive adhesive 240 may be disposed between the flip chip device 100and the cover 230, and between the cover 230 and the second surface 210b of the circuit board 210. The thermally conductive adhesive 240 mayquickly transfer heat generated from the flip chip device 100 into thecover 230. Also, the thermally conductive adhesive 240 may act to fixthe cover 230 to the flip chip device 100 and the circuit board 210.

The one or more solder balls 250 of FIG. 4 may be disposed on a firstsurface 210 a of the circuit board 210 opposite to the second surface210 b on which the flip chip device 100 is mounted. That is, the one ormore solder balls 250 may be electrically connected to the circuitpattern 211 of the circuit board 210. Due to the presence of the one ormore solder balls 250, a semiconductor device in accordance with arepresentative embodiment of the present invention, such as thesemiconductor device 200, may, for example, be mounted on a mother boardor main board of electronic equipment such as a computer, a smart phone,and the like.

FIG. 5 illustrates a cross-sectional view of yet another exemplarysemiconductor device 300, in accordance with a representative embodimentof the present invention. Referring to FIG. 5, the semiconductor device300 includes a flip chip device 100, a circuit board 210, an under fill220, a second encapsulant 330, and one or more solder balls 250.

The flip chip device 100, the circuit board 210, the under fill 220, andthe one or more solder balls 250 of the semiconductor device 400 may,for example, correspond to the similarly numbered elements of thesemiconductor device 200 of FIG. 4. Thus, the second encapsulant 330 ofthe semiconductor device 300, which is different in configuration fromthe semiconductor device 200 of FIG. 4, will be mainly described.

The second encapsulant 330 is disposed in a manner to surround the flipchip device 100, the under fill 220, and a second surface 210 b of thecircuit board 210. That is, the second encapsulant 330 protects the flipchip device 100 and the circuit board 210 against external environments.Here, a first surface 210 a of the circuit board 210 is exposed to theoutside of the second encapsulant 330. That is, a surface of the circuitboard 210 on which the solder ball 250 is disposed is exposed to theoutside. In the representative embodiment of the present invention shownin FIG. 5, the second encapsulant 330 may, for example, be formed of anepoxy-based resin that is an electrically non-conductive material.

FIG. 6 illustrates a cross-sectional view of still another exemplarysemiconductor device 400, in accordance with a representative embodimentof the present invention. Referring to FIG. 6, the semiconductor device400 includes a flip chip device 100, a circuit board 210, an under fill220, a second encapsulant 430, and one or more solder balls 250.

The flip chip device 100, the circuit board 210, the under fill 220, andthe solder balls 250 of the semiconductor device 400 may correspond tothose similarly numbered elements of the semiconductor device 300 ofFIG. 5. Thus, the second encapsulant 430 of the semiconductor device400, which is different in configuration from the semiconductor device300 of FIG. 5, will be mainly descried.

The second encapsulant 430 is disposed in a manner to surround the flipchip device 100, the under fill 220, and a second surface 210 b of thecircuit board 210. In the representative embodiment of the presentinvention illustrated in FIG. 6, a second surface 130 b of the firstencapsulant 130 is exposed to the external environment outside of thesecond encapsulant 430. Also, a first surface 210 a of the circuit board210 on which the one or more solder balls 250 are disposed is alsoexposed to the external environment outside of the second encapsulant430. That is, the second encapsulant 430 is disposed in a manner tosurround a side surface of the flip chip device 100, the under fill 220,and the second surface 210 b of the circuit board 210, therebyprotecting the flip chip device 100 and the circuit board 210 againstexternal environments. The second encapsulant 430 may, for example, beformed an epoxy-based resin that is an electrically non-conductivematerial.

FIG. 7 illustrates a cross-sectional view of an exemplary semiconductordevice, in accordance with a representative embodiment of the presentinvention.

Referring to FIG. 7, the semiconductor device 500 includes a firstsemiconductor die 110 where a plurality of through electrodes 111 andone or more conductive pads 112 are disposed, a second semiconductor die120 on which one or more conductive pillars 121 is disposed, a firstencapsulant 530 surrounding a first surface 120 a of the secondsemiconductor die 120, and one or more conductive pillars 140 disposedon the first semiconductor die 110.

The first semiconductor die 110, the second semiconductor die 120, andthe conductive pillars 140 of the semiconductor device 500 maycorrespond to those elements of the semiconductor device 100 of FIG. 1.Thus, the first encapsulant 530 of the semiconductor device 500, whichis different in configuration from the semiconductor device 100 of FIG.1, will be mainly described.

The first encapsulant 530 is disposed in a manner to cover a secondsurface 110 b of the first semiconductor die 110, the first surface 120a and the edges of the second die 120, and surround the conductivepillars 121. That is, the first encapsulant 530 is disposed between thesecond surface 110 b of the first semiconductor die 110 and the firstsurface 120 a of the second semiconductor die 120. The first encapsulant530 protects electrical connections between the second surface 110 b ofthe first semiconductor die 110 and the first surface 120 a of thesecond semiconductor die 120 against external environments. Also, afirst surface 110 a of the first semiconductor die 110 and a secondsurface 120 b of the second semiconductor die 120 are exposed to theexternal environment outside of the first encapsulant 530. The firstencapsulant 530 may, for example, be formed of an epoxy-based resin thatis an electrically non-conductive material.

FIG. 8 illustrates a cross-sectional view of an exemplary semiconductordevice 600, in accordance with another representative embodiment of thepresent invention. Referring to FIG. 8, the semiconductor device 600includes a semiconductor device 500, a circuit board 210, an under fill220, and one or more solder balls 250. The semiconductor device 500 hasa configuration similar to that of the semiconductor device 500 of FIG.7, and thus, will be referred to herein as a flip chip device.

The flip chip device 500 includes one or more conductive pillars 140exposed to one surface thereof. The conductive pillars 140 are mountedon a second surface 210 b of the circuit board 210.

The circuit board 210 includes a circuit pattern 211 and an insulationlayer 212. As described above, the conductive pillars 140 of the flipchip device 500 are electrically connected to the circuit pattern 211 ofthe circuit board 210.

The under fill 220 is formed between the flip chip device 500 and thecircuit board 210. That is, the under fill 220 is disposed on thecircuit board 210 in a manner to surround the conductive pillars 140 aswell as cover a first surface 110 a of a first semiconductor die 110 ofthe flip chip device 500. Thus, the under fill 200 may prevent the flipchip device 500 and the circuit board 210 from being separated from eachother by any stresses due to a difference in the coefficients of thermalexpansion of the flip chip device 500 and the circuit board 210.

A second encapsulant 630 is disposed in a manner to surround the flipchip device 500, the under fill 220, and cover a second surface 210 b ofthe circuit board 210. That is, the second encapsulant 630 protects theflip chip device 500 and the circuit board 210 against externalenvironments. Here, a first surface 210 a of the circuit board 210 isexposed to the external environment outside of the second encapsulant630. That is, a surface of the circuit board 210 on which the solderballs 250 are disposed is exposed to the external environment outside ofthe semiconductor device 600. The second encapsulant 630 may, forexample, be formed an epoxy-based resin that is an electricallynon-conductive material.

The one or more solder balls 250 are disposed on a first surface 210 aof the circuit board 210 opposite to the second surface 210 b on whichthe flip chip device 500 is mounted. In the representative embodiment ofthe present invention illustrated in FIG. 8, the solder balls 250 areelectrically connected to the circuit pattern 211 of the circuit board210. Due to the presence of the one or more solder balls 250, thesemiconductor device 600 according to this representative embodiment ofthe present invention may be mounted, for example, on a mother board ormain board of electronic equipment such as a computer, a smart phone,and the like.

FIG. 9 illustrates a cross-sectional view of an exemplary semiconductordevice 700, in accordance with yet another representative embodiment ofthe present invention. Referring to FIG. 9, the semiconductor device 700includes a flip chip device 500, a circuit board 210, an under fill 220,a second encapsulant 730, and one or more solder balls 250.

The flip chip device 500, the circuit board 210, the under fill 220, andthe solder balls 250 of the semiconductor device 700 may correspond tosimilarly numbered elements of the semiconductor device 600 of FIG. 8.Thus, the second encapsulant 730 of the semiconductor device 700, whichis different in configuration from the semiconductor device 600 of FIG.8, will be mainly described.

In the illustration of FIG. 9, the second encapsulant 730 is disposed ina manner to surround the flip chip device 500, the under fill 220, andcover portions of a second surface 210 b of the circuit board 210. Here,a second surface 120 b of a second semiconductor die 120 of the flipchip device 500 is exposed to the external environment outside of thesecond encapsulant 730. Also, a first surface 210 a of the circuit board210 on which the solder balls 250 are disposed is also exposed to theexternal environment outside. That is, the second encapsulant 730 isdisposed in a manner to cover a side surface of the flip chip device500, the under fill 220, and the second surface 201 b of the circuitboard 210, thereby protecting the flip chip device 500 and the circuitboard 210 against external environments. The second encapsulant 730 may,for example, be formed an epoxy-based resin that is an electricallynon-conductive material.

FIG. 10 illustrates a cross-sectional view of an exemplary semiconductordevice 800, in accordance with another representative embodiment of thepresent invention. Referring to FIG. 10, the semiconductor device 800includes a flip chip device 500, a circuit board 210, an under fill 220,a second encapsulant 730, one or more solders ball 250, and a cover 870.

The flip chip device 500, the circuit board 210, the under fill 220, thesecond encapsulant 730, and the solder balls 250 of the semiconductordevice 800 may correspond to the similarly numbered elements of thesemiconductor device 700 of FIG. 9. Thus, the cover 870 of thesemiconductor device 800, which is different in configuration from thesemiconductor device 700 of FIG. 9, will be mainly described.

The cover 870 is attached to a second surface 120 b of a secondsemiconductor die 120 of the flip chip device 500. That is, the cover870 is attached to the second surface 120 b of the second semiconductordie 120 exposed to the outside of the second encapsulant 730. Thus, thesecond semiconductor die 120 of the flip chip device 500 may beprotected against external environments by the cover 870. The cover 870may, for example, be formed of a metal, ceramic, or any suitableequivalent to improve heat dissipation performance, but this aspect doesnot necessarily represent a specific limitation of a representativeembodiment of the present invention, unless explicitly recited in theclaims. The cover 870 may be attached to the second surface 120 b of thesecond semiconductor die 120 of the flip chip device 500 using, forexample, a thermally conductive adhesive (not shown).

FIG. 11 illustrates a cross-sectional view of an exemplary semiconductordevice 900, in accordance with another representative embodiment of thepresent invention. Referring to FIG. 11, the semiconductor device 900includes a first semiconductor die 910, a second semiconductor die 120,a first encapsulant 130, and one or more conductive bumps 940. Thesemiconductor device 900 is similar in many ways to the semiconductordevice 100, and includes one or more under bump metals 913 of the firstsemiconductor die 910 and the conductive bumps 940. Thus, the under bumpmetals 913 of the first semiconductor die 910 and the conductive bumps940 in the semiconductor device 900 will be mainly described.

The first semiconductor die 910 includes one or more under bump metals913 disposed on a first surface 110 a of the first semiconductor die910. In a representative embodiment of the present invention, each ofthe one or more under bump metals 913 may be electrically connected to acorresponding through electrode 111 exposed at the first surface 110 aof the first semiconductor die 910. That is, each of the throughelectrodes 111 may electrically connect the corresponding under bumpmetal 913 disposed on the first surface 110 a of the first semiconductordie 910 to a corresponding conductive pad 112 disposed on a secondsurface 110 b of the first semiconductor die 110.

The conductive bumps 940 are disposed on the first surface 110 a of thefirst semiconductor die 910. The conductive bumps 940 are electricallyconnected to the under bump metal 913 disposed on the first surface 110a of the first semiconductor die 910. The conductive bumps 940 may, insome representative embodiments of the present invention, be a solderbump. Also, the one or more conductive bumps 940 may, for example, beformed of one selected from an eutectic solder (Sn37Pb), a high leadsolder (Sn95Pb), and a lead-free solder (SnAg, SnAu, SnCu, SnZn, SnZnBi,SnAgCu, SnAgBi, and the like), or any other suitable material. It shouldbe noted, however, that the materials listed here do not necessarilyrepresent specific limitations of a representative embodiment of thepresent invention, unless explicitly recited in the claims.

Therefore, the semiconductor device 900 according to a representativeembodiment of the present invention may be, for example, manufactured ina flip chip configuration. Thus, the semiconductor device 900 having theflip chip configuration may be mounted on, for example, a mother boardor a main board, as it is.

FIG. 12 illustrates a flowchart of an exemplary method for manufacturingthe semiconductor device of FIG. 11, in accordance with a representativeembodiment of the present invention. Referring to FIG. 12, the method ofmanufacturing a semiconductor device includes a first semiconductor diepreparation process S1, an under bump metal formation process S1A, acarrier adhesion process S2A, a grinding process S3, a conductive padformation process S4, a second semiconductor die seat process S5, anencapsulation process S6, a carrier separation process S7A, a conductivebump formation process S8A, and a singularization process S9.

The exemplary method of manufacturing the semiconductor device 900 willbe described in detail with reference to FIGS. 13A to 13L.

FIG. 13A illustrates a cross-sectional view of the first semiconductordie preparation process S1 in the method of manufacturing thesemiconductor device 900. The first semiconductor die preparationprocess S1 may, for example, correspond to the semiconductor diepreparation process S1 of FIGS. 2 and 3A.

FIG. 13B illustrates a cross-sectional view of an exemplary under bumpmetal formation process S1A in the method of manufacturing thesemiconductor device 900, in accordance with a representative embodimentof the present invention. In the under bump metal formation process S1Aof FIG. 13A, one or more under bump metals 913 are formed on a firstsurface 110 a of a first semiconductor die 910 x. In more detail, one ormore of the under bump metals 913 may be electrically connected to acorresponding through electrode 111 exposed at the first surface 110 aof the first semiconductor die 910 x. The material of the one or moreunder bump metals 913 may include, for example, a gold layer, a nickellayer and a copper layer, or gold layer, a nickel layer, and an aluminumlayer, which may be sequentially stacked on each other. It should benoted that the materials listed above do not necessarily representspecific limitations of a representative embodiment of the presentinvention, unless explicitly recited in the claims, in that any suitablematerials and layer may be employed without departing from the spiritand scope of the present invention.

FIG. 13C illustrates a cross-sectional view of an exemplary carrieradhesion process S2A in the method of manufacturing the semiconductordevice 900, in accordance with a representative embodiment of thepresent invention. In the carrier adhesion process S2A of FIG. 13C, acarrier 119 may temporarily adhere to cover the first surface 110 a ofthe first semiconductor die 910 x. The carrier 119 temporarily adheresto the first surface 110 a of the first semiconductor die 910 x by anadhesive 119 a to cover the one or more under bump metals 913. Thecarrier 119 may adhere to fix the first semiconductor die and preventthe first semiconductor die 910 x from being damaged when the firstsemiconductor die 910 x is moved by equipment for the various processesin the method.

FIGS. 13D and 13E illustrate cross-sectional views of an exemplarygrinding process S3 in the method of manufacturing the semiconductordevice 900, in accordance with a representative embodiment of thepresent invention. The grinding process S3 may correspond to thegrinding process S3 of the semiconductor device 100 illustrated in FIGS.3C and 3D. It should be noted that although a grinding process isdescribed with respect to FIGS. 3C, 3D, 13D, and 13E, use of grindingdoes not necessarily represent a specific limitation of the presentinvention, unless explicitly recited in the claims, as any othersuitable means of reducing the thickness of the first semiconductor die910 x, known now or in the future, may be employed without departingfrom the spirit and scope of the present invention.

FIG. 13F illustrates a cross-sectional view of an exemplary conductivepad formation process S4 in the method of manufacturing thesemiconductor device 900, in accordance with a representative embodimentof the present invention. The conductive pad formation process S4 ofFIG. 13F may correspond to, for example, the conductive pad formationprocess S4 of the semiconductor device 100 illustrated in FIG. 3E.

FIG. 13G illustrates a cross-sectional view of a second semiconductordie seat process S5 in the method of manufacturing the semiconductordevice 900, in accordance with a representative embodiment of thepresent invention. The second semiconductor die seat process S5 of FIG.13G may correspond to, for example, the second semiconductor die seatprocess S5 illustrated in FIG. 3F.

FIG. 13H illustrates a cross-sectional view of an exemplaryencapsulation process S6 in the method of manufacturing thesemiconductor device 900, in accordance with a representative embodimentof the present invention. The encapsulation process S6 of FIG. 13H maycorrespond to, for example, the encapsulation process S6 of thesemiconductor device 100 illustrated in FIG. 3G.

FIG. 13I illustrates a cross-sectional view of an exemplary carrierseparation process S7 in the method of manufacturing the semiconductordevice 900, in accordance with a representative embodiment of thepresent invention. In the carrier separation process S7 of FIG. 13I, thecarrier 119 temporarily applied to the first surface 110 a of the firstsemiconductor die 910 during the carrier adhesion process S2A of FIG.13C, is removed. The carrier 119 may be separated from the firstsemiconductor die 910 after a predetermined stimulation is applied intothe adhesive 119 a to reduce the strength of adhesiveness. Theadhesiveness of the adhesive 119 a of the carrier 119 of FIG. 13C may bereduced, for example, by the thermal treatment performed for curing thefirst encapsulant 130 in the encapsulation process S6, however thisapproach does not necessarily represent a specific limitation of thepresent invention, unless explicitly recited in the claims. Also, in thecarrier separation process S7 of FIG. 13I, the carrier 119 is separatedand removed to expose the first surface 110 a of the semiconductor die910 to the external environment outside.

FIGS. 13J and 13K illustrate cross-sectional views of an exemplaryconductive bump formation process S8A in the method of manufacturing thesemiconductor device 900, in accordance with a representative embodimentof the present invention. In the conductive bump formation process S8A,as shown in FIG. 13J, the first semiconductor die 910 with the firstencapsulant 130 covering the second surface 110 b of the firstsemiconductor die 910 is overturned to allow the first surface 110 a ofthe first semiconductor die 910 to be disposed facing an upper side.That is, the first semiconductor die 910 is disposed on an upper side,and the second semiconductor die 120 and the first encapsulant 130 aredisposed on a lower side. Here, the first encapsulant 130 may functionas a carrier for fixing the first semiconductor die 910 and the secondsemiconductor die 120 when the first and second semiconductor die 910and 120 are moved using equipment for each of the processes of themethod. Also, in the illustration of FIG. 13K, as in the conductivepillar formation process S8 of FIG. 2, one or more conductive bumps 940are formed on the first surface 110 a of the first semiconductor die 910disposed on the upper side. In more detail, the conductive bumps 940 areconnected to the under bump metal 913 and disposed on the first surface110 a of the first semiconductor die 910.

FIG. 13L illustrates a cross-sectional view of an exemplarysingularization process S9 in the method of manufacturing thesemiconductor device 900, in accordance with a representative embodimentof the present invention. In the singularization process S9 of FIG. 13L,a plurality of semiconductor devices are separated or diced intoindividual semiconductor devices 900 by using a dicing tool (not shown)such as a diamond wheel, a laser beam, or any other suitable means knownnow or in the future.

As described above, in the method of manufacturing the semiconductordevice 900, the second semiconductor die 120 may be stacked on the firstsemiconductor die 910, and the first encapsulant 130 may be formed. Thecarrier 119 may then be removed. Thus, the carrier 119 may be easilyremoved when compared to a situation in which a carrier is removed froma wafer having a thin thickness. Also, in the method of manufacturingthe semiconductor device 900 described above, because the carrier 119 isremoved before the semiconductor devices are separated from one another,the carrier 119 may be easily removed when compared to the situationwhere a carrier 119 is removed after semiconductor devices are separatedfrom each other.

FIG. 14 illustrates a cross-sectional view of an exemplary semiconductordevice 1000, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 14, the semiconductor device 1000includes a semiconductor device 900, a circuit board 1010, an under fill1020, a cover 1030, a thermally conductive adhesive 1040, and one ormore solder balls 1050. The semiconductor device 900 has a configurationsimilar to that of the semiconductor device 900 of FIG. 11, and thus,will be referred to herein as a flip chip device.

The flip chip device 900 includes one or more conductive bumps 940exposed to one surface thereof as described above. The conductive bumps940 are mounted on a second surface 1010 b of the circuit board 1010.

The circuit board 1010 includes a circuit pattern 1011 and an insulationlayer 1012. Furthermore, a passive device 1060 may be mounted on thecircuit board 1010. Also, as described above, the one or more conductivebumps 940 of the flip chip device 900 may be electrically connected tothe circuit pattern 1011 of the circuit board 1010.

The under fill 1020 is formed between the flip chip device 900 and thecircuit board 1010. That is, the under fill 1020 surrounds theconductive bump 940 as well as covering a first surface 110 a of a firstsemiconductor die 910 of the flip chip device 900. Thus, the under fill1020 may prevent the flip chip device 900 and the circuit board 1010from being separated from each other due to any stresses that may resultfrom a difference in the coefficients of thermal expansion of the flipchip device 900 and the circuit board 1010.

As shown in the example of FIG. 14, the cover 1030 is attached to thecircuit board 1010 to surround the flip chip device 900. Thus, the flipchip device 900 may be protected against the external environment by thecover 1030. The cover 1030 may, for example, be formed of a metal, aceramic, or any suitable equivalent to improve heat dissipationperformance. It should be noted that the materials listed here for thecover 1030 do not necessarily represent specific limitations of thepresent invention, unless explicitly recited in the claims, and that anysuitable materials may be employed without departing from the spirit andscope of the present invention.

The thermally conductive adhesive 1040 is disposed between the flip chipdevice 900 and the cover 1030 and between the cover 1030 and the circuitboard 1010. The thermally conductive adhesive 1040 may quickly transferheat generated from the flip chip device 900 into the cover 1030. Also,the thermally conductive adhesive 1040 may fix the cover 1030 to theflip chip device 900 and the circuit board 1010.

As shown in FIG. 14, the one or more solder balls 1050 are disposed on afirst surface 1010 a of the circuit board 1010 opposite to the secondsurface 1010 b on which the flip chip device 900 is mounted. That is,the solder balls 1050 may be electrically connected to the circuitpattern 1010 of the circuit board 1011. Due to presence of the solderballs 1050, a semiconductor device such as the semiconductor device 1000of FIG. 14, in accordance with a representative embodiment of thepresent invention, may be mounted on, for example, a mother board ormain board of electronic equipment such as a computer, a smart phone,and the like.

FIG. 15 illustrates a cross-sectional view of an exemplary semiconductordevice 1100, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 15, the semiconductor device 1100includes a flip chip device 900, a circuit board 1010, an under fill1020, a second encapsulant 1130, and one or more solder balls 1050.

The flip chip device 900, the circuit board 1010, the under fill 1020,and the solder balls 1050 of the semiconductor device 1200 maycorrespond to similarly numbered elements of the semiconductor device1000 of FIG. 14. Thus, the second encapsulant 1130 of the semiconductordevice 1100, which is different in configuration from the semiconductordevice 1000 of FIG. 14, will be mainly described.

In the illustration of FIG. 15, the second encapsulant 1130 is disposedin a manner to surround the flip chip device 900, the under fill 1020,and cover a second surface 1010 b of the circuit board 1010. That is,the second encapsulant 1130 protects the flip chip device 900 and thecircuit board 1010 against the external environment. Here, a firstsurface 1010 a of the circuit board 1010 is exposed to the externalenvironment outside of the second encapsulant 1130. That is, a surfaceof the circuit board 1010 on which the solder balls 1050 are disposed isexposed to the external environment outside. The second encapsulant 1130may, for example, be formed using an epoxy-based resin that is anelectrically non-conductive material.

FIG. 16 illustrates a cross-sectional view of an exemplary semiconductordevice 1200, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 16, the semiconductor device 1200includes a flip chip device 900, a circuit board 1010, an under fill1020, a second encapsulant 1230, and one or more solder balls 1050.

The flip chip device 900, the circuit board 1010, the under fill 1020,and the solder balls 1050 of the semiconductor device 1200 maycorrespond to similarly numbered elements of the semiconductor device1100 of FIG. 15. Thus, the second encapsulant 1230 of the semiconductordevice 1200, which is different in configuration from the semiconductordevice 1100 of FIG. 15, will be mainly described.

In the example of FIG. 16, the second encapsulant 1230 is disposed in amanner to surround the flip chip device 900, the under fill 1020, andcover a second surface 1010 b of the circuit board 1010. Here, a secondsurface 130 b of a first encapsulant 130 is exposed to the externalenvironment outside of the second encapsulant 1230. Also, a firstsurface 1010 a of the circuit board 1010 on which the solder balls 1050are disposed is exposed to the external environment outside. That is,the second encapsulant 1230 is disposed in a manner to surround a sidesurface of the flip chip device 900, the under fill 1020, and cover thesecond surface 1010 b of the circuit board 1010, thereby protecting theflip chip device 900 and the circuit board 1010 against the externalenvironment. The second encapsulant 1130 may, for example, be formedusing, for example, an epoxy-based resin that is an electricallynon-conductive material.

FIG. 17 illustrates a cross-sectional view of an exemplary semiconductordevice 1300, in accordance with a representative embodiment of thepresent invention

Referring to FIG. 17, the semiconductor device 1300 includes a firstsemiconductor die 910 where a plurality of through electrodes 111 andone or more conductive pads 112 are disposed, a second semiconductor die120 on which one or more conductive pillars 121 are disposed, a firstencapsulant 1330 surrounding a first surface 120 a of the secondsemiconductor die 120, and one or more conductive bumps 940 disposed onthe first semiconductor die 910.

The first semiconductor die 910, the second semiconductor die 120, andthe conductive bumps 940 of the semiconductor device 1300 may correspondto the similarly numbered elements of the semiconductor device 900 ofFIG. 11. Thus, the first encapsulant 1330 of the semiconductor device1300, which is different in configuration from the semiconductor device900 of FIG. 11, will be mainly described.

The first encapsulant 1330 is disposed in a manner to cover a secondsurface 110 b of the first semiconductor die 910, the first surface 120a of the second die 120, and surround the conductive pillars 121. Thatis, the first encapsulant 1330 is disposed between the second surface110 b of the first semiconductor die 910 and the first surface 120 a ofthe second semiconductor die 120. The first encapsulant 1330 protectsany electrical connections between the second surface 110 b of the firstsemiconductor die 910 and the first surface 120 a of the secondsemiconductor die 120 against the external environment. Also, a firstsurface 110 a of the first semiconductor die 910 and a second surface120 b of the second semiconductor die 120 are exposed to the externalenvironment outside of the first encapsulant 1330. The first encapsulant1330 may be formed of, for example, an epoxy-based resin that is anelectrically non-conductive material.

FIG. 18 illustrates a cross-sectional view of an exemplary semiconductordevice 1400, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 18, the semiconductor device 1400includes a semiconductor device 1300, a circuit board 1010, an underfill 1020, and one or more solder balls 1050. The semiconductor device1300 of FIG. 18 has a configuration similar to that of the semiconductordevice 1300 of FIG. 17, and thus, will be referred to herein as a flipchip device.

The flip chip device 1300 includes one or more conductive bumps 940exposed to one surface thereof as described above. The conductive bumps940 are mounted on a second surface 1010 b of the circuit board 1010.

As shown in the example of FIG. 18, the circuit board 1010 includes acircuit pattern 1011 and an insulation layer 1012. As described above,the conductive bumps 940 of the flip chip device 1300 may beelectrically connected to the circuit pattern 1011 of the circuit board1010.

In the example of FIG. 18, the under fill 1020 is formed between theflip chip device 1300 and the circuit board 1010. That is, the underfill 1020 is disposed on the circuit board 1010 to surround theconductive bumps 940 as well as cover a first surface 110 a of a firstsemiconductor die 910 of the flip chip device 1300. Thus, the under fill1020 may prevent the flip chip device 1300 and the circuit board 1010from being separated from each other due to any stresses that resultfrom a difference in the coefficients of thermal expansion of the flipchip device 1300 and the circuit board 1010.

The second encapsulant 1430 is disposed in a manner to surround the flipchip device 1300, the under fill 1020, and a second surface 1010 b ofthe circuit board 1010. That is, the second encapsulant 1430 protectsthe flip chip device 1300 and the circuit board 1010 against theexternal environment. Here, a first surface 1010 a of the circuit board1010 is exposed to the external environment outside of the secondencapsulant 1430. That is, the first surface 1010 a of the circuit board1010, on which the one or more solder balls 1050 are disposed, isexposed to the external environment outside. In some representativeembodiments of the present invention, the second encapsulant 1430 may,for example, be formed of an epoxy-based resin that is an electricallynon-conductive material.

As shown in FIG. 8, the one or more solder balls 1050 are disposed on afirst surface 1010 a of the circuit board 1010 opposite to the secondsurface 1010 b on which the flip chip device 1300 is mounted. The solderballs 1050 may be electrically connected to the circuit pattern 1010 ofthe circuit board 1011. Due to presence of the solder balls 1050, asemiconductor device such as the semiconductor device 1400 of FIG. 18,in accordance with a representative embodiment of the present invention,may, for example, be mounted on a mother board or main board ofelectronic equipment such as a computer, a smart phone, and the like.

FIG. 19 illustrates a cross-sectional view of an exemplary semiconductordevice 1500, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 19, the semiconductor device 1500includes a flip chip device 1300, a circuit board 1010, an under fill1020, a second encapsulant 1530, and one or more solder balls 1050.

The flip chip device 1300, the circuit board 1010, the under fill 1020,and the solder balls 1050 of the semiconductor device 1500 maycorrespond to similar numbered elements of the semiconductor device 1400of FIG. 18. Thus, the second encapsulant 1530 of the semiconductordevice 1500, which is different in configuration from the semiconductordevice 1400 of FIG. 18, will be mainly described.

In the example of FIG. 19, the second encapsulant 1530 is disposed in amanner to surround the flip chip device 1300, the under fill 1020, andcover a second surface 1010 b of the circuit board 1010. Here, a secondsurface 120 b of a second semiconductor die 120 of the flip chip device1300 is exposed to the external environment outside of the secondencapsulant 1530. Also, a first surface 1010 a of the circuit board 1010on which the one or more solder balls 1050 are disposed is exposed tothe external environment outside. That is, the second encapsulant 1530is disposed in a manner to surround a side surface of the flip chipdevice 1300, the under fill 1020, and cover the second surface 1010 b ofthe circuit board 1010, thereby protecting the flip chip device 1300 andthe circuit board 1010 against the external environment. In arepresentative embodiment of the present invention, the secondencapsulant 1130 may, for example, be formed of an epoxy-based resinthat is an electrically non-conductive material.

FIG. 20 illustrates a cross-sectional view of an exemplary semiconductordevice 1600, in accordance with a representative embodiment of thepresent invention. Referring to FIG. 20, the semiconductor device 1600includes a flip chip device 1300, a circuit board 1010, an under fill1020, a second encapsulant 1530, one or more solder balls 1050, and acover 1670.

The flip chip device 1300, the circuit board 1010, the under fill 1020,the second encapsulant 1530, and the solder ball 1050 of thesemiconductor device 1600 of FIG. 20 may correspond, for example, tosimilarly numbered elements of the semiconductor device 1500 of FIG. 19.Thus, the cover 1670 of the semiconductor device 1600, which isdifferent in configuration from the semiconductor device 1500 of FIG.19, will be mainly described.

In some representative embodiments of the present invention, a coversuch as the cover 1670 may be attached to a second surface 120 b of asecond semiconductor die 120 of the flip chip device 1300. That is, thecover 1670 may be attached to the second surface 120 b of the secondsemiconductor die 120 exposed to the external environment outside of thesecond encapsulant 1530. Thus, the second semiconductor die 120 of theflip chip device 1300 may be protected against external environments bythe cover 1670. The cover 1670 may, for example, be formed of a metal, aceramic, or any suitable equivalent to improve heat dissipationperformance. It should be noted, however, that the mention of thesematerials does not represent a specific limitation of the presentinvention, unless explicitly recited in the claims, and that any othersuitable materials, known now or in the future, may be employed withoutdeparting from the spirit and scope of the present invention. The cover1670 may be attached to the second surface 120 b of the secondsemiconductor die 120 of the flip chip device 1300 by, for example, athermally conductive adhesive (not shown).

In the semiconductor device and the method of manufacturing the sameaccording to the embodiments, because the carrier is removed after thefirst and second semiconductor devices are stacked on each other, andthen the first encapsulant is formed, the carrier may be easily removedwhen compared to an arrangement where the carrier is removed from awafer having a thin thickness.

Also, in the semiconductor device and the method of manufacturing thesame according to the embodiments, because the carrier is removed beforethe semiconductor device is divided into the individual semiconductordevices or semiconductor die, it may be unnecessary to remove thecarrier from the individual semiconductor devices or semiconductor die.

An aspect of the present invention provides a semiconductor device and amethod of manufacturing the same, in which a carrier is capable of beingremoved from a wafer because the carrier is removed after first andsecond semiconductor devices are stacked on each other, and then a firstencapsulant is formed, that is an improvement when compared with anapproach in which a carrier is removed from a wafer having a thinthickness.

Another aspect of the present invention provides a semiconductor deviceand a method of manufacturing the same, in which it is unnecessary toremove a carrier from individual semiconductor devices or semiconductordie because the carrier is removed before the semiconductor device isdivided into the individual semiconductor devices or semiconductor die.

According to one representative embodiment of the present invention, amethod of manufacturing a semiconductor device includes: preparing afirst semiconductor die having a through electrode exposed to a firstsurface; adhering a carrier to the first surface of the firstsemiconductor die; forming a conductive pad so that the conductive padis connected to the through electrode exposed to a second surfaceopposite to the first surface of the first semiconductor die; seating asecond semiconductor die on the second surface of the firstsemiconductor die so that a conductive pillar formed on a first surfaceof the second semiconductor die is connected to the conductive pad;encapsulating the second semiconductor die and the second surface of thefirst semiconductor die by using a first encapsulant to cover the secondsemiconductor die and the second surface of the first semiconductor die;and separating the carrier adhering to the first surface of the firstsemiconductor die.

The method may further include, after the adhering of the carrier,grinding the second surface of the first semiconductor die to expose thethrough electrode to the second surface of the first semiconductor die.

The method may further include, after the separating of the carrier,forming a conductive pillar on the first surface of the firstsemiconductor die so that the conductive pillar of the firstsemiconductor die is connected to the through electrode exposed to thefirst surface of the first semiconductor die.

The method may further include, after the forming of the conductivepillar of the first semiconductor die, dicing the first semiconductordie and the second semiconductor die, which are stacked on each other,to divide the first and second semiconductor die into individualsemiconductor devices.

The method may further include, after the preparing of the firstsemiconductor die, forming a plurality of under bump metals so that eachof the under bump metals is connected to the through electrode exposedto the first surface of the first semiconductor die, wherein, in theadhering of the carrier, the carrier may be attached to the firstsurface of the first semiconductor die by using an adhesive to cover theunder bump metals.

The method may further include, after the adhering of the carrier,grinding the second surface of the first semiconductor die to expose thethrough electrode to the second surface of the first semiconductor die.

In the separating of the carrier, the carrier adhering to the firstsurface of the first semiconductor die may be separated to expose theunder bump metals to the outside.

The method may further include, after separating of the carrier, forminga conductive bump on the first surface of the first semiconductor die sothat the conductive bump is connected to each of the under bump metals.

The method may further include, after the forming of the conductivebump, dicing the first semiconductor die and the second semiconductordie, which are stacked on each other, to divide the first and secondsemiconductor die into individual semiconductor devices.

According to another representative embodiment of the present invention,a semiconductor device includes: a first semiconductor die having afirst surface and a second surface opposite to the first surface, thefirst semiconductor die including a plurality of conductive padsdisposed on the second surface and a plurality of through electrodespassing between the first surface and the second surface andrespectively connected to the plurality of conductive pads; a secondsemiconductor die having a first surface on which a conductive pillarconnected to each of the conductive pads is disposed; and a conductivemember disposed on the second surface of the first semiconductor die,the conductive member being electrically connected to each of thethrough electrodes.

The conductive member may include a conductive pillar disposed on asecond surface of the second semiconductor die and connected to each ofthe through electrodes.

The first semiconductor die may further include a plurality of underbump metals disposed on the first surface of the first semiconductor dieand respectively connected to the through electrodes.

The conductive member may include a conductive bump disposed on a secondsurface of the second semiconductor die and connected to each of theunder bump metals.

The semiconductor device may further include a first encapsulantcovering the second surface of the first semiconductor die and thesecond semiconductor die.

The semiconductor device may further include a circuit board having afirst surface and a second surface opposite to the first surface,wherein a conductive pattern exposed to the second surface may beconnected to the conductive member.

An under fill may be formed or filled between the circuit board and thefirst semiconductor die.

The semiconductor device may further include a second encapsulantcovering the second surface of the circuit board, the firstsemiconductor die, the second semiconductor die, and the firstencapsulant.

A second surface of the first encapsulant may be exposed to the outsideof the second encapsulant.

The semiconductor device may further include a cover attached to thecircuit board to cover the second surface of the circuit board, thefirst semiconductor die, and the second semiconductor die.

The second surface of the second semiconductor die may be exposed to theoutside of the first encapsulant.

The semiconductor device may further include a second encapsulantcovering the second surface of the circuit board, the firstsemiconductor die, the second semiconductor die, and the firstencapsulant.

The second surface of the second semiconductor die may be exposed to theoutside of the second encapsulant.

The semiconductor device may further include a cover adhering to thesecond surface of the second semiconductor die exposed to the outside ofthe second encapsulant.

The semiconductor device may further include a cover attached to thecircuit board to cover the second surface of the circuit board, thefirst semiconductor die, and the second semiconductor die.

Exemplary embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation.Accordingly, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made without departingfrom the spirit and scope of the present disclosure as set forth in thefollowing claims.

While the present invention has been described with reference to certainembodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted withoutdeparting from the scope of the present invention. In addition, manymodifications may be made to adapt a particular situation or material tothe teachings of the present invention without departing from its scope.Therefore, it is intended that the present invention not be limited tothe particular embodiment disclosed, but that the present invention willinclude all embodiments falling within the scope of the appended claims.

What is claimed is:
 1. A semiconductor device comprising: a first diecomprising a through electrode that electrically connects a conductivemember disposed on a first surface of the first die to a correspondingconductive pad disposed on a second surface of the first die oppositethe first surface; a first chip comprising a first surface on which aninterconnection structure is disposed, wherein: the interconnectionstructure comprising a solder structure, and the interconnectionstructure connected to the conductive member on the first surface of thefirst die via the conductive pad and the through electrode; a firstencapsulant covering at least a portion of the second surface of thefirst die and at least a side surface of the first chip; and a secondencapsulant surrounding: the first die, the first chip, and the firstencapsulant; wherein: at least one of the first encapsulant and/or thesecond encapsulant covers a second surface of the first chip oppositethe first surface of the first chip.
 2. The semiconductor device ofclaim 1, wherein: the solder structure comprises a pillar.
 3. Thesemiconductor device of claim 1, wherein: the first die comprises asemiconductor material.
 4. The semiconductor device of claim 1, wherein:the through electrode and the conductive pad of the first die comprisecircuitry remaining from a grinded-off semiconductor body.
 5. Thesemiconductor device of claim 1, wherein: the second surface of thefirst chip is exposed to the outside of the first encapsulant.
 6. Thesemiconductor device of claim 1, wherein: the second surface of thefirst chip is exposed to the outside of the second encapsulant.
 7. Thesemiconductor device of claim 1, further comprising: a cover over thesecond surface of the first chip and coupled to the first encapsulant.8. The semiconductor device of claim 1, wherein: a surface of the firstencapsulant is exposed to the outside of the second encapsulant.
 9. Thesemiconductor device of claim 1, wherein: the first encapsulant contactsa second surface of the first chip opposite the first surface of thefirst chip.
 10. The semiconductor device of claim 1, wherein: theconductive member comprises a pillar.
 11. The semiconductor device ofclaim 1, wherein: the entire second surface of the first chip iscontacted by the first encapsulant.
 12. The semiconductor device ofclaim 1, wherein: the entire second surface of the first chip iscontacted by the second encapsulant.
 13. A semiconductor devicecomprising: a first die comprising a through electrode that electricallyconnects a conductive member disposed on a first surface of the firstdie to a corresponding conductive pad disposed on a second surface ofthe first die opposite the first surface; a first chip comprising afirst surface on which an interconnection structure is disposed,wherein: the interconnection structure comprising a solder structure,and the interconnection structure connected to the conductive member onthe first surface of the first die via the conductive pad and thethrough electrode; a first encapsulant covering at least a portion ofthe second surface of the first die and at least a side surface of thefirst chip; a circuit board comprising a conductive layer on a firstsurface connected to the first chip via the conductive member, thethrough electrode, the conductive pad, and the interconnectionstructure; and a cover adhesively attached to a surface of the firstencapsulant and to the first surface of the circuit board, the coversurrounding the first die and the first chip.
 14. The semiconductordevice of claim 13, wherein: the first encapsulant contacts a secondsurface of the first chip opposite the first surface of the first chip.15. The semiconductor device of claim 13, wherein: the conductive membercomprises a conductive pillar.
 16. A semiconductor device comprising: afirst die comprising a through electrode that electrically connects aconductive member disposed on a first surface of the first die to acorresponding conductive pad disposed on a second surface of the firstdie opposite the first surface; a first chip comprising a first surfaceon which an interconnection structure is disposed, wherein: theinterconnection structure comprising a solder structure, and theinterconnection structure connected to the conductive member on thefirst surface of the first die via the conductive pad and the throughelectrode; a first encapsulant that fills a space between the secondsurface of the first die and the first surface of the first chip, andthat covers at least a side surface of the first chip; a circuit boardcomprising a first surface and a second surface opposite the firstsurface of the circuit board, the second surface of the circuit boardcomprising a conductive layer facing the first surface of the first dieand connected to the first chip via the conductive member, the throughelectrode, the conductive pad, and the interconnection structure; anunder fill that fills a space between the first surface of the first dieand the second surface of the circuit board; and a second encapsulantthat contacts at least a side surface of the first die, at least a sidesurface of the first encapsulant, at least a portion of the secondsurface of the circuit board, and at least a portion of a second surfaceof the first chip opposite the first surface of the first chip.
 17. Thesemiconductor device of claim 16, wherein: the conductive membercomprises a pillar.
 18. The semiconductor device of claim 16, wherein:the solder structure comprises a pillar.
 19. The semiconductor device ofclaim 16, wherein: the first die comprises a semiconductor material. 20.The semiconductor device of claim 16, wherein: the second encapsulantcontacts the entire second surface of the first chip and the under fillis a different material than the second encapsulant.